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| SI7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.008 @ VGS = 10 V 0.011 @ VGS = 4.5 V ID (A) 18 15 D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Buck Converter - High Side or Low Side D Synchronous Rectifier - Secondary Rectifier PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: SI7860DP-T1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 30 "20 18 15 "50 4.1 30 45 5 3.2 Steady State Unit V 11 8 A 1.5 mJ 1.8 1.1 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71854 S-32040--Rev. C, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 56 1.8 Maximum 25 70 2.3 Unit _C/W C/W 1 SI7860DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 18 VGS = 4.5 V, ID = 15 VDS = 15 V, ID = 18 IS = 3 A, VGS = 0 V 40 0.0066 0.0090 60 0.70 1.1 0.008 0.011 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 18 A 13 5 4.0 1.7 18 12 46 19 40 3.2 27 18 70 30 70 ns W 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 50 Output Characteristics VGS = 10 thru 4 V 50 Transfer Characteristics 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 30 20 3V 10 20 TC = 125_C 10 25_C -55_C 2.5 3.0 3.5 4.0 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71854 S-32040--Rev. C, 13-Oct-03 2 SI7860DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.015 On-Resistance vs. Drain Current 2500 Capacitance r DS(on) - On-Resistance ( W ) 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 C - Capacitance (pF) 2000 Ciss 1500 1000 Coss 500 Crss 0.003 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 4 VDS = 15 V ID = 16 A Gate Charge 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 16 A 8 12 16 20 r DS(on) - On-Resistance ( W) (Normalized) -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.040 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.032 I S - Source Current (A) 0.024 TJ = 25_C 0.016 ID = 16 A 0.008 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 71854 S-32040--Rev. C, 13-Oct-03 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 SI7860DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 ID = 250 mA 0.3 V GS(th) Variance (V) 160 200 Single Pulse Power, Juncion-To-Ambient Power (W) 0.0 120 -0.3 80 -0.6 40 -0.9 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 www.vishay.com 4 Document Number: 71854 S-32040--Rev. C, 13-Oct-03 |
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